excelics eia5060 - 1s tentative data sheet 5.0 - 6.0ghz, 1w internally matched power fet 5.0 - 6.0ghz bandwidth and input/output impedance matched to 50 ohm features high pae(35% typical) 3 1.0dbm typical p 1db output power 13db typical g 1db power gain non - hermetic 180 mil metal flange package electrical characteristics (t a = 25 o c) eia0506 - 1p180f symbols parameters/test conditions min typ max unit p 1db output power at 1db compressio n f=5.0 - 6.0ghz vds=8v, idsq=0.5 idss 29.5 31.0 dbm g 1db gain at 1db compression f=5.0 - 6.0ghz vds=8v, idsq=0.5 idss 11 13 db pae power added efficiency at 1db compression f=5.0 - 6.0ghz vds=8v, idsq=0.5 idss 35 % id 1db drain current at 1db compression 440 ma ip 3 output 3 rd order intercept point f=5.0 - 6.0ghz vds=8v, idsq=0.5 idss 37 dbm i dss saturated drain current vds=3v, vgs=0v 550 720 850 ma g m transconductance vds=3v, vgs=0v 760 ms v p pinch - off voltage vds=3v, ids=6ma - 1.0 - 2.5 v bv gd drain breakdown voltage igd=4.8ma - 13 - 15 v r th thermal resistance (au - sn eutectic attach) 16 o c/w maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain - source voltage 12v 8v vgs gate - source voltage - 8v - 3v ids drain current idss idss igsf forward gate current 90ma 15ma pin input power 29dbm @ 3db compression tch channel temp erature 175 o c 150 o c tstg storage temperature - 65/175 o c - 65/150 o c pt total power dissipation 8.5w 7.1w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals. excelics semiconductor, inc., 2908 scott blvd., santa clara, ca 95054 phone: (408) 970 - 8664 fax: (408) 970 - 8998 web site: www.excelics.com
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